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PM45502C
Silicon N-Channel Power MOS FET Module
November 1996 Application
High Speed Power Switching
Features
* * * * * * * * Equipped with Power MOS FET Low on-resistance High speed switching Low drive current Wide area of safe operation Inherent parallel diode between source and drain Isolated base from Terminal Suitable for motor driver, switching regulator and etc.
PM45502C
Outline
LF-C D2 S2 D1 S1 G1 S1 S2 No S1 D1 S2 D2 G1 S1 G2 S2 G2 Terminals M5 screw M5 screw M5 screw M5 screw #110 #110 #110 #110 Remarks Power terminal Rg G2 S2 S2 D1 Rg G1 S1 S1 Equivalent Circuit D2
Electrode Source 1 Drain 1 Source 2 Drain 2 Gate 1 Source 1 Gate 2 Source 2
Signal terminals
Absolute Maximum Ratings (Ta = 25C) (Per FET chip)
Item Drain source voltage Gate source voltage Drain current Drain peak current Body to drain diode reverse drain current Body to drain diode reverse drain peak current Channel dissipation Channel temperature Storage temperature Insulation dielectric Notes 1. Value at Tc = 25C 2. Base to terminals AC minute Symbol VDSS VGSS ID ID(peak) IDR IDR(peak) Pch* Tch Tstg Visol*
2 1
Rating 450 20 50 100 50 100 300 150 -45 to +125 2000
Unit V V A A A A W C C V
2
PM45502C
Electrical Characteristics (Ta = 25C) (Per FET chip)
Item Drain to source breakdown voltage Gate to source leak current Gate to source breakdown voltage Symbol V(BR)DSS IGSS V(BR)GSS Min 450 -- 20 -- 1.5 -- -- 25 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 2.0 0.08 40 10250 3600 400 150 700 800 600 1.2 200 Max -- 50 -- 1 4.0 3.0 0.12 -- -- -- -- -- -- -- -- -- -- Unit V A V mA V V S pF pF pF ns ns ns ns V ns IF = 25 A, VGS = 0 IF = 25 A, VGS = 0 diF/dt = 100 A/s ID = 25 A, VGS = 10 V RL = 1.2 Test conditions ID = 10 mA, VGS = 0 VGS = 16 V, VDS = 0 IG = 100 A, VDS = 0 VDS = 360 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 25 A, VGS = 10 V* ID = 25 A, VGS = 10 V* ID = 25 A, VDS = 10 V* VDS = 10 V, VGS = 0 f = 1 MHz
1
Zero gate voltage drain current IDSS Gate to source threshold voltage Drain to source saturation voltage VGS(th) VDS(on)
Static Drain to source on state RDS(on) resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note 1. Pulse Test |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr
1
1
Mechanical Characteristics
Item Fixing strength Symbol -- -- Weight -- Condition Mounting into main-terminal with M5 screw Mounting into heat sink with M6 screw Typical value Rating 15 to 20 20 to 30 300 Unit kg*cm kg*cm g
3
PM45502C
Power vs. Temperature Derating 600 Channel Dissipation Pch (W)
400
200
0
50 100 Case Temperature TC (C) Maximum Safe Operation Area
150
100
D C
PW
O pe
10
=
0
30 Drain Current ID (A) 10
10
n
ra
m
1
10 s s
tio
s
m
(1
=
s
(T
Sh
C
ot
)
)
25
3 Operation in this area is limited by RDS (on) 1.0 Ta = 25C 0.3 0.1 1
C
PM45502C PM50502C
3 30 10 100 300 1,000 Drain to Source Voltage VDS (V)
Typical Output Characteristics 100 10 V 7.0 V 6.0 V 5.5 V 60 Pulse Test
80 Drain Current ID (A)
40
5.0 V 4.5 V VGS = 4.0 V
20
0
10 20 30 40 Drain to Source Voltage VDS (V) Typical Transfer Characteristics
50
100 -25C 80 Drain Current ID (A) VDS = 20 V Pulse Test 60 Ta = 25C 75C
40
20
0
2 6 8 4 Gate to Source Voltage VGS (V)
10
4
PM45502C
Drain to Source Saturation Voltage VDS (on) (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage 10 Pulse Test 8 75 A 6 50 A
4
2
ID = 25 A
0
4 12 16 8 Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Drain Current
20
Static Drain to Source on State Resistance RDS (on) ()
0.5 Pulse Test VGS = 10 V
0.2 0.1
15 V 0.05
0.02 0.01 0.005 2 5 20 10 50 100 Drain Current ID (A) 200
Static Drain to Source on State Resistance vs. Temperature Static Drain to Source on State Resistance RDS (on) () 0.20 VGS = 10 V Pulse Test 0.16 50 A 75 A
0.12
ID = 25 A
0.08
0.04
0 -40
40 0 80 120 Case Temperature TC (C)
160
5
PM45502C
Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance yfs (S) 50 VDS = 10 V Pulse Test -25C 75C Ta = 25C
20 10 5
2 1.0 0.5 0.5
1.0
5 2 20 10 Drain Current ID (A)
50
Body to Drain Diode Reverse Recovery Time 1,000 Reverse Recovery Time trr (ns) 500 di/dt = 100 A/s, VGS = 0 Ta = 25C Pulse Test
200 100 50
20 10 0.5
10 2 1.0 5 20 Reverse Drain Current IDR (A) Typical Capacitance vs. Drain to Source Voltage
50
50 VGS = 0 f = 1 MHz
Capacitance C (nF)
10
Ciss
Coss 1
0.1 0.05 0
Crss 20 10 30 40 Drain to Source Voltage VDS (V) Dynamic Input Characteristics 50
500 Drain to Source Voltage VDS (V) VDD = 100 V 250 V 400 V 300 VGS 200
20 Gate to Source Voltage VGS (V)
400
VDS
16
12
8
100
VDD = 400 V 250 V 100 V
ID = 50 A
4
0 0 200 100 300 400 Gate Charge Qg (nc) 500
6
PM45502C
Switching Characteristics 5,000 VGS = 10 V PW = 10 s, duty < 1% Switching Time t (ns) 2,000 1,000 500 tf tr td (on) td (off)
200 100 50 1 2
10 20 5 Drain Current ID (A)
50
100
Reverse Drain Current vs. Source to Drain Voltage 100 Reverse Drain Current IDR (A) Pulse Test
80
60
40 5 V, 10 V VGS = 0, -10 V
20
0
0.4 1.2 1.6 0.8 2.0 Source to Drain Voltage VSD (V)
7
PM45502C
Normalized Transient Thermal Impedance S (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 1.0 D=1 0.5 0.3 0.1 0.2 0.1 0.05 0.03 0.01 10
0.02 0.01
TC = 25C
ch-c (t) = S (t) * ch-c ch-c = 0.416C/W, TC = 25C PDM PW 1 D = PW T
1 Shot Pulse 100 1m 10 m Pulse Width PW (s) 100 m
T
10
Switching Time Test Circuit Vin Monitor Vout Monitor D.U.T RL 50
Vin 10 V
VDD . = 30 V .
Waveforms 90% Vin Vout 10% 10% 90% td (off) tf 10%
td (on)
90% tr
8
PM45502C
When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi's permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user's unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi's semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi's products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi's sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi's products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS.
Hitachi, Ltd.
Semiconductor & IC Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 For further information write to: Hitachi America, Ltd. Semiconductor & IC Div. 2000 Sierra Point Parkway Brisbane, CA. 94005-1835 USA Tel: 415-589-8300 Fax: 415-583-4207
Hitachi Europe GmbH Electronic Components Group Continental Europe Dornacher Strae 3 D-85622 Feldkirchen Munchen Tel: 089-9 91 80-0 Fax: 089-9 29 30 00
Hitachi Europe Ltd. Electronic Components Div. Northern Europe Headquarters Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA United Kingdom Tel: 0628-585000 Fax: 0628-778322
Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 0104 Tel: 535-2100 Fax: 535-1533 Hitachi Asia (Hong Kong) Ltd. Unit 706, North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel: 27359218 Fax: 27306071
9

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